quem nós somos

como o fabricante principal de material composto semicondutor na China. pam-xiamen desenvolve tecnologias avançadas de crescimento de cristais e epitaxia, variam desde a primeira geração de bolacha de germânio, arsenieto de gálio de segunda geração com crescimento de substrato e epitaxia em materiai8
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Após mais de 20 anos de acumulação e desenvolvimento, nossa empresa tem uma vantagem óbvia em inovação tecnológica e pool de talentos. no futuro, precisamos acelerar o ritmo de ação real para oferecer aos clientes melhores produtos e serviços
doctor chan -CEO de xiamen powerway material avançado co., ltd

nossos produtos

laser azul

modelos de gan

Os produtos modelo de pam-xiamen consistem em camadas cristalinas de nitreto de gálio (gan), nitreto de alumínio (aln), nitreto de alumínio e gálio (algan) e nitreto de indio e gálio (ingan), que são depositados em substratos de safira, O carboneto de silício ou os produtos de modelo de silicon.pam-xiamen permitem 20-50% de tempos de ciclo de epita8

Gan on Silicon

substrato de gancho autônomo

pam-xiamen estabeleceu a tecnologia de fabricação de bolacha de substrato de gancho independente (galão de nitreto), que é para uhb-led e ld. cultivado por tecnologia de epitaxia em fase de vapor de hidreto (hvpe), nosso substrato de ganhado tem baixa densidade de defeito.

cristal de gaas

Gaas (arsenieto de gálio) wafers

Pwam desenvolve e fabrica substratos semicondutores compostos - cristal de arsenieto de gálio e wafer.we usamos tecnologia avançada de crescimento de cristais, tecnologia de processamento de gradiente vertical (vgf) e wafer de gaas, estabeleceu uma linha de produção de crescimento de cristal, corte, moagem para processamento de polimento e construí8

cristal sic

epitaxia sica

nós fornecemos epitaxia sica customizada de película fina (carboneto de silício) em substratos de 6h ou 4h para o desenvolvimento de dispositivos de carboneto de silício. A bolacha sic epi é usada principalmente para diodos schottky, transistores de efeito de campo semicondutor de óxido de metal, transistores de efeito de campo de junção, transisto8

cristal sic

substrato sic

pam-xiamen oferece wafers de carboneto de silício semicondutor, 6h sic e 4h sic em diferentes graus de qualidade para pesquisador e fabricantes da indústria. Desenvolvemos tecnologia de crescimento de cristal sic e tecnologia de processamento de bolacha de cristal sic, estabeleceu uma linha de produção para o substrato Sic do fabricante, que é apli8

gan expataxy

Bolacha epitaxial com base de gan com base

A bolacha epitaxial conduzida a base de gancho pam-xiamen (nitruro de gálio) é para diodos emissores de luz azul e verde de alto brilho (led) e diodos laser (ld).

epitaxia ganada

Bolacha Epitaxial Gan Hemt

Os transdutores de nitrogênio de gálio (gan) (transistores de alta mobilidade de elétrons) são a próxima geração de tecnologia de transistores de potência rf. Com a tecnologia gan, Pam-xiamen agora oferece alpina epi wafer em safira ou silício e algan / gan em modelo de safira .

cristal sic

sic wafer reclaim

pam-xiamen é capaz de oferecer os seguintes serviços de wafer de sic reclaim.

Porque escolher-nos

  • Suporte tecnológico gratuito e profissional

    Você pode obter o nosso serviço de tecnologia gratuita do inquérito para depois do serviço, com base no nosso Mais de 25 experiências na linha de semicondutores.

  • bom serviço de vendas

    nosso objetivo é atender a todos os seus requisitos, não importa quão pequenas encomendas e quão difíceis questões podem ser, para manter um crescimento sustentado e lucrativo para cada cliente através de nossos produtos qualificados e atendimento satisfatório.

  • Experiências de mais de 25 anos

    Com mais de 25 + anos experiências no campo composto de materiais semicondutores e negócios de exportação, nossa equipe pode assegurar-lhe que podemos entender seus requisitos e lidar com o seu projeto profissionalmente.

  • qualidade confiável

    A qualidade é nossa primeira prioridade. pam-xiamen foi iso9001: 2008 , possui e compartilha quatro fábricas modernas que podem fornecer uma grande variedade de produtos qualificados para atender às diferentes necessidades de nossos clientes, e cada ordem deve ser tratada através de nosso rigoroso s8

"Nós estamos usando as wafers de epi do powerway para alguns de nossos trabalhos. Estamos muito impressionados com a qualidade do epi"
james s.speck, departamento de materiais university of california
2018-01-25
"queridas equipes pam-xiamen, obrigada pela opinião da sua profissão, o problema foi resolvido, estamos tão felizes em ser seu parceiro"
raman k. Chauhan, serena fotônica
2018-01-25
"Obrigado pela resposta rápida das minhas perguntas e do preço competitivo, é muito útil para nós, vamos pedir novamente em breve"
markus sieger, university of ulm
2018-01-25
"as bolachas de carboneto de silício chegaram hoje e ficamos muito contentes com elas! aprovação para sua equipe de produção!"
dennis, universidade de exeter
2018-01-25

as universidades e empresas mais famosas do mundo confiam em nós

últimas notícias

Density Functional Theory Calculations of Atomic Configurations and Bandgaps of C-, Ge-, and Sn-Doped Si Crystals for Solar Cells

2020-03-17

Poly-Si crystals are mainly used in solar cells because of their low cost. Here, the zones of sensitivity to wavelengths in sunlight should be expanded to increase the engineering efficiency of solar cells. Group IV compound semiconductors films, e.g., Si (Ge) films doped with C, Ge (C, Si), and/or Sn atoms with contents of several %, on a Si or Ge substrate have been identified as potential solutions to this technical problem. In this study, we calculated the formation energy of each atomic configuration of C, Ge, and Sn atoms in Si by using density functional theory. The "Hakoniwa" method proposed by Kamiyama et al. [Materials Science in Semiconductor Processing, 43, 209 (2016)] was applied to a 64-atom supercell of Si including up to three atoms of C, Ge, and/or Sn (up to 4.56%) in order to obtain the ratio of each atomic configuration and the average value of the Si bandgaps. Not only the conventional generalized gradient approximation (GGA) but also the screened-exchange local-den...

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Electrical Conductivity of Direct Wafer-Bonded GaAs/GaAs Structures for Wafer-Bonded Tandem Solar Cells

2020-03-09

Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Optical Transmission, Photoluminescence, and Raman Scattering of Porous SiC Prepared from p-Type 6H SiC

2020-03-05

The optical transmission, temperature-dependence of the photoluminescence (PL), and Raman scattering of porous SiC prepared from p-type 6H-SiC are compared with those from bulk p-type 6H-SiC. While the transmission spectrum of bulk SiC at room temperature reveals a relatively sharp edge corresponding to its band gap at 3.03 eV, the transmission edge of porous SiC (PSC) is too wide to determine its band gap. It is believed that this wide edge might be due to surface states in PSC. At room temperature, the PL from PSC is 20 times stronger than that from bulk SiC. The PL PSC spectrum is essentially independent of temperature. The relative intensities of the Raman scattering peaks from PSC are largely independent of the polarization configuration, in contrast to those from bulk SiC, which suggests that the local order is fairly random. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com&...

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Optical Transmission, Photoluminescence, and Raman Scattering of Porous SiC Prepared from p-Type 6H SiC

2020-03-05

The optical transmission, temperature-dependence of the photoluminescence (PL), and Raman scattering of porous SiC prepared from p-type 6H-SiC are compared with those from bulk p-type 6H-SiC. While the transmission spectrum of bulk SiC at room temperature reveals a relatively sharp edge corresponding to its band gap at 3.03 eV, the transmission edge of porous SiC (PSC) is too wide to determine its band gap. It is believed that this wide edge might be due to surface states in PSC. At room temperature, the PL from PSC is 20 times stronger than that from bulk SiC. The PL PSC spectrum is essentially independent of temperature. The relative intensities of the Raman scattering peaks from PSC are largely independent of the polarization configuration, in contrast to those from bulk SiC, which suggests that the local order is fairly random. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com&...

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Fabrication of InP/SiO2/Si Substrate using Ion-Cutting Process and Selective Chemical Etching

2020-02-18

In this study, an InP layer was transferred onto a Si substrate coated with a thermal oxide, through a process combining ion-cutting process and selective chemical etching. Compared with conventional ion-cutting of bulk InP wafers, this layer transfer scheme not only takes advantage of ion- cutting by saving the remaining substrates for reuse, but also takes advantage of selective etching to improve the transferred surface conditions without using the chemical and mechanical polishing. An InP/InGaAs/InP heterostructure initially grown by MOCVD was implanted with H+ ions. The implanted heterostructure was bonded to a Si wafer coated with a thermal SiO2 layer. Upon subsequent annealing, the bonded structure exfoliated at the depth around the hydrogen projected range located in the InP substrate. Atomic force microscopy showed that after selective chemical etchings on the as-transferred structure, a final structure of InP/SiO2/Si was obtained with a relatively smooth surface. Source:IOPsc...

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A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates

2020-02-12

We review our recent efforts on developing HgCdSe infrared materials on GaSb substrates via molecular beam epitaxy (MBE) for fabricating next generation infrared detectors with features of lower production cost and larger focal plane array format size. In order to achieve high-quality HgCdSe epilayers, ZnTe buffer layers are grown before growing HgCdSe, and the study of misfit strain in ZnTe buffer layers shows that the thickness of ZnTe buffer layer needs to be below 300 nm in order to minimize the generation of misfit dislocations. The cut-off wavelength/alloy composition of HgCdSe materials can be varied in a wide range by varying the ratio of Se/Cd beam equivalent pressure during the HgCdSe growth. Growth temperature presents significant impact on the material quality of HgCdSe, and lower growth temperature leads to higher material quality for HgCdSe. Typically, long-wave infrared HgCdSe (x=0.18, cut-off wavelength of  at 80 K) presents an electron mobility as high as&nbs...

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The Electrochemical Society Wet Etching Technology for Semiconductor and Solar Silicon Manufacturing: Part 2 - Process, Equipment and Implementation

2020-01-20

Wet etching is an important step in the manufacturing of semiconductor and solar wafers and for the production of MEMS devices. While it has been replaced by the more precise dry etching technology in advanced semiconductor device fabrication, it still plays an important role in the manufacture of the silicon substrate itself. It is also used for providing stress relief and surface texturing of solar wafers in high volume. The technology of wet etching silicon for semiconductor and solar applications will be reviewed. Impact on this step for wafer properties and critical parameters (flatness, topology and surface roughness for semiconductor wafers, surface texture and reflectance for solar wafers) will be presented. The rationale for the use of a etching technology and etchant for specific applications in semiconductor and solar wafer manufacturing will be presented. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at&nbs...

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Characterization of 4H-SiC Homoepitaxial Films on Porous 4H-SiC from Bis(trimethylsilyl)methane Precursor

2020-01-13

4H-SiC homoepitaxial films were grown on 8° off-axis porous 4H-SiC (0001) faces in the temperature range of  by chemical vapor deposition from bis(trimethylsilyl)methane (BTMSM) precursor. The activation energy for growth was 5.6 kcal/mol, indicating that the film growth is dominated by the diffusion-limited mechanism. Triangular stacking faults were incorporated in the SiC thin film grown at low temperature of 1280°C due to the formation of 3C-SiC polytype. Moreover, super-screw dislocations appeared seriously in the SiC film grown below 1320°C. Clean and featureless morphology was observed in the SiC film grown below 25 standard cubic centimeters per minute (sccm)  carrier gas flow rate of BTMSM at 1380°C while 3C-SiC polytype with double positioning boundaries grew at 30 sccm flow rate of BTMSM. The dislocation density of the epi layer was strongly influenced by the growth temperature and flow rate of BTMSM. Double axis crystal X-ray diffraction and optical micro...

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Density Functional Theory Study of the Stress Impact on Formation Enthalpy of Intrinsic Point Defect around Dopant Atom in Ge Crystal

2020-01-07

During the last decade, the use of single crystal germanium (Ge) layers and structures in combination with silicon (Si) substrates has led to a revival of defect research on Ge. In Si crystals, dopants and stresses affect the intrinsic point defect (vacancy V and self-interstitial I) parameters and thus change the thermal equilibrium concentrations of V and I Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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