quem nós somos

como o fabricante principal de material composto semicondutor na China. pam-xiamen desenvolve tecnologias avançadas de crescimento de cristais e epitaxia, variam desde a primeira geração de bolacha de germânio, arsenieto de gálio de segunda geração com crescimento de substrato e epitaxia em materiai8
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Após mais de 20 anos de acumulação e desenvolvimento, nossa empresa tem uma vantagem óbvia em inovação tecnológica e pool de talentos. no futuro, precisamos acelerar o ritmo de ação real para oferecer aos clientes melhores produtos e serviços
doctor chan -CEO de xiamen powerway material avançado co., ltd

nossos produtos

laser azul

modelos de gan

Os produtos modelo de pam-xiamen consistem em camadas cristalinas de nitreto de gálio (gan), nitreto de alumínio (aln), nitreto de alumínio e gálio (algan) e nitreto de indio e gálio (ingan), que são depositados em substratos de safira, O carboneto de silício ou os produtos de modelo de silicon.pam-xiamen permitem 20-50% de tempos de ciclo de epita8

Gan on Silicon

substrato de gancho autônomo

pam-xiamen estabeleceu a tecnologia de fabricação de bolacha de substrato de gancho independente (galão de nitreto), que é para uhb-led e ld. cultivado por tecnologia de epitaxia em fase de vapor de hidreto (hvpe), nosso substrato de ganhado tem baixa densidade de defeito.

cristal de gaas

Gaas (arsenieto de gálio) wafers

Pwam desenvolve e fabrica substratos semicondutores compostos - cristal de arsenieto de gálio e wafer.we usamos tecnologia avançada de crescimento de cristais, tecnologia de processamento de gradiente vertical (vgf) e wafer de gaas, estabeleceu uma linha de produção de crescimento de cristal, corte, moagem para processamento de polimento e construí8

cristal sic

epitaxia sica

nós fornecemos epitaxia sica customizada de película fina (carboneto de silício) em substratos de 6h ou 4h para o desenvolvimento de dispositivos de carboneto de silício. A bolacha sic epi é usada principalmente para diodos schottky, transistores de efeito de campo semicondutor de óxido de metal, transistores de efeito de campo de junção, transisto8

cristal sic

substrato sic

pam-xiamen oferece wafers de carboneto de silício semicondutor, 6h sic e 4h sic em diferentes graus de qualidade para pesquisador e fabricantes da indústria. Desenvolvemos tecnologia de crescimento de cristal sic e tecnologia de processamento de bolacha de cristal sic, estabeleceu uma linha de produção para o substrato Sic do fabricante, que é apli8

gan expataxy

Bolacha epitaxial com base de gan com base

A bolacha epitaxial conduzida a base de gancho pam-xiamen (nitruro de gálio) é para diodos emissores de luz azul e verde de alto brilho (led) e diodos laser (ld).

epitaxia ganada

Bolacha Epitaxial Gan Hemt

Os transdutores de nitrogênio de gálio (gan) (transistores de alta mobilidade de elétrons) são a próxima geração de tecnologia de transistores de potência rf. Com a tecnologia gan, Pam-xiamen agora oferece alpina epi wafer em safira ou silício e algan / gan em modelo de safira .

cristal sic

sic wafer reclaim

pam-xiamen é capaz de oferecer os seguintes serviços de wafer de sic reclaim.

Porque escolher-nos

  • Suporte tecnológico gratuito e profissional

    Você pode obter o nosso serviço de tecnologia gratuita do inquérito para depois do serviço, com base no nosso Mais de 25 experiências na linha de semicondutores.

  • bom serviço de vendas

    nosso objetivo é atender a todos os seus requisitos, não importa quão pequenas encomendas e quão difíceis questões podem ser, para manter um crescimento sustentado e lucrativo para cada cliente através de nossos produtos qualificados e atendimento satisfatório.

  • Experiências de mais de 25 anos

    Com mais de 25 + anos experiências no campo composto de materiais semicondutores e negócios de exportação, nossa equipe pode assegurar-lhe que podemos entender seus requisitos e lidar com o seu projeto profissionalmente.

  • qualidade confiável

    A qualidade é nossa primeira prioridade. pam-xiamen foi iso9001: 2008 , possui e compartilha quatro fábricas modernas que podem fornecer uma grande variedade de produtos qualificados para atender às diferentes necessidades de nossos clientes, e cada ordem deve ser tratada através de nosso rigoroso s8

"Nós estamos usando as wafers de epi do powerway para alguns de nossos trabalhos. Estamos muito impressionados com a qualidade do epi"
james s.speck, departamento de materiais university of california
2018-01-25
"queridas equipes pam-xiamen, obrigada pela opinião da sua profissão, o problema foi resolvido, estamos tão felizes em ser seu parceiro"
raman k. Chauhan, serena fotônica
2018-01-25
"Obrigado pela resposta rápida das minhas perguntas e do preço competitivo, é muito útil para nós, vamos pedir novamente em breve"
markus sieger, university of ulm
2018-01-25
"as bolachas de carboneto de silício chegaram hoje e ficamos muito contentes com elas! aprovação para sua equipe de produção!"
dennis, universidade de exeter
2018-01-25

as universidades e empresas mais famosas do mundo confiam em nós

últimas notícias

Realization and characterization of thin single crystal Ge films on sapphire

2019-06-13

We have successfully produced and characterized thin single crystal Ge films on sapphire substrates (GeOS). Such a GeOS template offers a cost-effective alternative to bulk germanium substrates for applications where only a thin (<2 µm) Ge layer is needed for device operation. The GeOS templates have been realized using the Smart CutTM technique. 100 mm diameter GeOS templates have been manufactured and characterized to compare the Ge thin film properties with bulk Ge. Surface defect inspection, SEM, AFM, defect etching, XRD and Raman spectroscopy were all performed. The results obtained for each characterization technique used have highlighted that the material properties of the transferred thin Ge film were very close to the ones of a bulk Ge reference. An epitaxial AlGaInP/GaInP/AlGaInP double heterostructure was grown atop the GeOS template to demonstrate the template's stability under the conditions encountered in typical device realization. The photoluminescent behavior of thi...

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Optical nonlinearity characteristics of crystalline InSb semiconductor thin films

2019-06-04

The intensity-dependent nonlinear absorption and refraction characteristics of crystalline InSb thin films are investigated by z-scan method at 405 nm laser wavelength. Results show that the nonlinear absorption coefficient of crystalline InSb thin films is in the order of ~ + 10−2 m W−1, and the nonlinear refractive index is in the order of ~ + 10−9 m2 W−1. Variable-temperature ellipsometric spectroscopy measurements and electronic process analyses as well as theoretical calculations are employed to discuss the internal mechanisms responsible for the giant optical nonlinearity. Analysis results indicate that the nonlinear absorption mainly stems from the laser-induced free-carrier absorption effect, whereas the nonlinear refraction is mainly from thermal effect due to band gap shrinking and carrier effect due to the transition process of electrons, respectively. These characteristics may be responsible for the super-resolution effect in nano-optical information storage. Source:IOPscie...

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Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region

2019-05-27

This paper proposes a double epi-layers 4H–SiC junction barrier Schottky rectifier (JBSR) with embedded P layer (EPL) in the drift region. The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process. The electric field and potential distribution are changed due to the buried P-layer, resulting in a high breakdown voltage (BV) and low specific on-resistance (Ron,sp). The influences of device parameters, such as the depth of the embedded P+ regions, the space between them and the doping concentration of the drift region, etc., on BV and Ron,sp are investigated by simulations, which provides a particularly useful guideline for the optimal design of the device. The results indicate that BV is increased by 48.5% and Baliga's figure of merit (BFOM) is increased by 67.9% compared to a conventional 4H–SiC JBSR. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@p...

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Growth of InP directly on Si by corrugated epitaxial lateral overgrowth

2019-05-23

In an attempt to achieve an InP–Si heterointerface, a new and generic method, the corrugated epitaxial lateral overgrowth (CELOG) technique in a hydride vapor phase epitaxy reactor, was studied. An InP seed layer on Si (0 0 1) was patterned into closely spaced etched mesa stripes, revealing the Si surface in between them. The surface with the mesa stripes resembles a corrugated surface. The top and sidewalls of the mesa stripes were then covered by a SiO2 mask after which the line openings on top of the mesa stripes were patterned. Growth of InP was performed on this corrugated surface. It is shown that growth of InP emerges selectively from the openings and not on the exposed silicon surface, but gradually spreads laterally to create a direct interface with the silicon, hence the name CELOG. We study the growth behavior using growth parameters. The lateral growth is bounded by high index boundary planes of {3 3 1} and {2 1 1}. The atomic arrangement of these planes, crystallographic o...

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Charge transport performance of high resistivity CdZnTe crystals doped with In/Al

2019-05-13

To evaluate the charge transport properties of as-grown high resistivity CdZnTe crystals doped with In/Al, the α particle spectroscopic response was measured using an un-collimated 241Am (5.48 MeV) radioactive source at room temperature. The electron mobility lifetime products (μτ)e of the CdZnTe crystals were predicted by fitting plots of photo-peak position versus electrical field strength using the single carrier Hecht equation. A TOF technique was employed to evaluate the electron mobility for CdZnTe crystals. The mobility was obtained by fitting the electron drift velocities as a function of the electrical field strengths, where the drift velocities were achieved by analyzing the rise-time distributions of the voltage pulses formed by a preamplifier. A fabricated CdZnTe planar detector based on a low In concentration doped CdZnTe crystal with (μτ)e = 2.3 × 10−3 cm2/V and μe = 1000 cm2/(V dot m s), respectively, exhibits an excellent γ-ray spectral resolution of 6.4% (FWHM = 3.8 ke...

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Selective-area growth of GaN on non- and semi-polar bulk GaN substrates

2019-05-09

We carried out the selective-area growth of GaN and fabricated InGaN/GaN MQWs on non- and semi-polar bulk GaN substrates by MOVPE. The differences in the GaN structures and the In incorporation of InGaN/GaN MQWs grown on non- and semi-polar GaN substrates were investigated. In the case of selective-area growth, different GaN structures were obtained on GaN,  GaN, and GaN substrates. A repeating pattern of  and  facets appeared on  GaN. Then, we fabricated InGaN/GaN MQWs on the facet structures on  GaN. The emission properties characterized by cathodoluminescence were different for  and  facets. On the other hand, for InGaN/GaN MQWs on non- and semi-polar GaN substrates, steps along the a-axis were observed by AFM. In particular on  GaN, undulations and undulation bunching appeared. Photoluminescence characterization indicated that In incorporation increased with the off-angle from the m-plane and also depended on the polarity. Source:IOPscience F...

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Analysis of the band alignment of highly strained indium-rich GaInNAs QWs on InP substrates

2019-04-29

The focus of this paper is to present the calculations of the band alignment of indium-rich (>53%) highly strained Ga1−xInxNyAs1−y quantum wells on InP substrates which allows an emission wavelength of the order of 2.3 µm. We concentrate on the band alignment of Ga0.22In0.78N0.01As0.99 wells lattice matched to In0.52Al0.48As barriers. Our calculations show that the incorporation of nitrogen into Ga1−xInxAs improves the band alignment significantly allowing Ga0.22In0.78N0.01As0.99/In0.52Al0.48As quantum wells on InP substrates to compete with the unique band alignment of GaInNAs/GaAs quantum wells on GaAs substrates. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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High-Performance InAs Quantum Well based Corbino Magnetoresistive Sensors on Germanium Substrates

2019-04-25

High-quality InAs/Al0.2Ga0.8Sb quantum well structures were grown on Germanium substrates by molecular beam epitaxy (MBE). Electron mobilities of 27,000 cm2/Vs for sheet concentrations of nS=1.8×1012 cm-2 were routinely achieved at room temperature for undoped InAs/Al0.2Ga0.8Sb quantum well structures on Germanium substrates. We developed a simple processing technology for the fabrication of Corbino magnetoresistive devices. Excellent current sensitivities of 195 Ω/T and voltage sensitivities of 2.35 T-1 at a magnetic field of 0.15 T were measured for Corbino shaped magnetoresistors on Germanium substrate at room temperature. This sensing performance is comparable to that obtained by identical sensors on GaAs substrate. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Structural and optical characterization of GaSb on Si (001) grown by Molecular Beam Epitaxy

2019-04-17

GaSb epilayers were grown on Si (001) using molecular beam epitaxy via AlSb quantum dots as an interfacial misfit (IMF) array between the Si substrates and GaSb epilayers. The effect of IMF array thickness, growth temperature and post annealing on the surface morphology, structural and optical properties of the GaSb on Si were investigated. Among five different IMF array thicknesses (5, 10, 20, 40 and 80 ML) that were used in this study, the best result was obtained from the sample with a 20 ML AlSb IMF array. Additionally, it was found that although the full width at half maximum (FWHM) and threading dislocation (TD) densities obtained from high resolution x-ray diffraction curves can be improved by increasing the growth temperature, a decrease in the photoluminescence (PL) signal and an increase in the surface roughness (RMS) emerged. On the other hand, the results indicate that by applying post annealing the GaSb epilayer crystal quality can be improved in terms of FWHM, TD density,...

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In 2018, China's semiconductor materials market is 8.5 billion US dollars

2019-04-08

As an important part of new materials, semiconductor materials are the top priority of all countries in the world for the development of electronic information industry. It supports the development of localization of electronic information industry and is of great significance to industrial structure upgrading, national economy and national defense construction. In 2018, domestic semiconductor materials, with the joint efforts of all parties, achieved gratifying results in some areas, but the progress in the localization of key materials in the middle and high-end areas was slow, and the breakthroughs were few. The overall situation is not optimistic. China's semiconductor material segmentation progress is not uniform According to WSTS, in 2018, under the guidance of the memory market, the global semiconductor market continued to maintain rapid growth. The annual market size is expected to reach 477.94 billion US dollars, an increase of 15.9%. However, as the problem of the shortage of...

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